Vgs(th) (Max) @ Id:4V @ 250µA

Vgs (Max):±20V

Technology:MOSFET (Metal Oxide)

Supplier Device Package:PowerPAK® 1212-8

Series:TrenchFET®

Rds On (Max) @ Id, Vgs:295 mOhm @ 4A, 10V

Power Dissipation (Max):3.7W (Ta), 52W (Tc)

Packaging:Cut Tape (CT)

Package / Case:PowerPAK® 1212-8

Other Names:SI7115DN-T1-GE3CT

Operating Temperature:-50°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Moisture Sensitivity Level (MSL):1 (Unlimited)

Manufacturer Standard Lead Time:33 Weeks

Lead Free Status / RoHS Status:Lead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds:1190pF @ 50V

Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V

FET Type:P-Channel

FET Feature:-

Drive Voltage (Max Rds On, Min Rds On):6V, 10V

Drain to Source Voltage (Vdss):150V

Detailed Description:P-Channel 150V 8.9A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Current - Continuous Drain (Id) @ 25°C:8.9A (Tc)